(1)APPENDIX APPENDIX APPENDIX APPENDIX AAAA Error Error Error Error analysisanalysisanalysisanalysis A1.A1

APPENDIX APPENDIX APPENDIX APPENDIX AAAA

Error Error Error

Error analysisanalysisanalysisanalysis A1.A1.

A1.A1. StandardStandardStandardStandard DeviationDeviationDeviationDeviation

( )

( )

( )

2 / 2 1 N

1 i

i

1 N N

x x

⎟⎟

⎟

⎟

⎟

⎠

⎞

⎜⎜

⎜

⎜

⎜

⎝

⎛

−

∑

=

where x , xiand N are mean data, data and number of data respectively.

A2.A2.

A2.A2. StandardStandardStandardStandard ErrorErrorErrorError

Consider S as a function of certain variable x, y, ….., where, S = f (x, y, ……),

⎟⎠

⎜ ⎞

⎝

⎛ ∆ S

S =

2 / 2 1

2

...

y y x

x

⎥

⎥

⎦

⎤

⎢

⎢

⎣

⎡

⎟⎟ +

⎠

⎞

⎜⎜⎝ +⎛ ∆

⎟⎠

⎜ ⎞

⎝

⎛ ∆ ,

where x, y,…. is various variable.

A3.A3.

A3.A3. ErrorErrorErrorError ofofofof filmfilmfilmfilm thickness,thickness,thickness,thickness, ∆∆∆∆dddd The film thickness, d

d=

( )

⎞

⎜⎜⎝

⎛ λ λ n 2

m

The ∆d is,

2

d d⎟

⎠

⎜ ⎞

⎝

⎛ ∆ =

2

⎟⎠

⎜ ⎞

⎝

⎛ λ

λ

∆ +

( )

( )

2

n n

⎟⎟⎠

⎞

⎜⎜⎝

⎛ λ

λ

∆ ,

where, ∆λ= 2 nm, ∆n(λ) = 0.01 , ∆d = 5 nm.

A4.

A4.

A4.A4. ErrorErrorErrorError ofofofof opticalopticalopticaloptical bandbandbandband gap,gap,gap,gap, ∆∆∆∆EEEEgggg

The optical band gap is determined by, (αhν) = B (hν - Eg)²,

where, Eg = ⎟

⎠

⎜ ⎞

⎝

⎛ m

c ,

c and m are the intercept and slope for the plot of (αhν) versus E.

The ∆Egis,

2

g g

E E

⎟⎟

⎠

⎞

⎜⎜

⎝

⎛ ∆ =

2

c c⎟

⎠

⎜ ⎞

⎝

⎛ ∆ +

2

m m⎟

⎠

⎜ ⎞

⎝

⎛ ∆

∆Eg= 0.05 eV

The error of c and m is obtained using regression in data analysis program in Microsoft Excel.

A5.

A5.

A5.A5. ErrorErrorErrorError ofofofof HydrogenHydrogenHydrogenHydrogen Content,Content,Content,Content, ΔΔΔΔCCCCHHHH

Error in the hydrogen content was obtained from the FTIR analysis. The equation for integrated intensity, I and area under the curve, S is given. The hydrogen concentration, CHor H%,

CH =

C H

N

N x 100%

2

H H

C C

⎟⎟⎠

⎞

⎜⎜⎝

⎛ ∆ =

2

H H

N N

⎟⎟⎠

⎞

⎜⎜⎝

⎛ ∆ +

2

C C

N N

⎟⎟

⎠

⎞

⎜⎜

⎝

⎛ ∆

∆CH= 5%, where, ∆NH= 0.01, ∆NC= 0.01 x 10²³

APPENDIX APPENDIXAPPENDIXAPPENDIX BBBB Deposition Deposition Deposition

Deposition SystemSystemSystemSystem B1.B1.

B1.B1. DepositionDepositionDepositionDeposition procedure.procedure.procedure.procedure.

VACUUMING VACUUMING

VACUUMINGVACUUMING THETHETHETHE DEPOSITIONDEPOSITIONDEPOSITIONDEPOSITION CHAMBERCHAMBERCHAMBERCHAMBER

1. CLOSE all valves.

2. ON Rotary Pump, Penning and Pirani pressure meter.

3. OPEN roughing valve, wait until the chamber pressure or Penning meter, Peis ~ 1 x 10^-

3mbar.

4. OPEN backing valve, wait until Peis ~ 1 x 10^-3mbar.

5. Checking the gas lines:

- CLOSE backing valve.

- OPEN the gas lines involved to vacuum the gas lines.

- Make sure Peis ~ 1 x 10^-3mbar.

6. Flow water through the coil around the diffusion pump. Make sure there is water flowing at the end of the line. Switch on the fan.

7. OPEN backing valve.

8. ON diffusion pump, wait for about 15 minutes to heat.

9. CLOSE roughing valve.

10. OPEN high vacuum valve, wait until HV display at S1 is ~ 1 x 10^-5mbar.

11. ON the substrate heater, wait for the pre-set temperature.

12. Check the base pressure, CLOSE high vacuum valve.

13. OFF diffusion pump.

14. OPEN roughing valve. (backing valve is kept open, close only when diffusion pump has cooled down.)

15. ON OSK, check voltage (zero).

16. FLOW the deposition gas, pressure goes down, Pe~ 1 x 10^-1mbar. Adjust the roughing valve to control the deposition pressure.

17. READY to deposit. ON power, deposition starts.

Roughing valve

Backing valve Penning 2

Penning 1

High vacuum valve

Rotary pump

Detoxification system

Diffusion pump

High vacuum pressure gauge Deposition

chamber

Gas inlet

DEPOSITION DEPOSITION

DEPOSITIONDEPOSITION USINGUSINGUSINGUSING SILANESILANESILANESILANE GASGASGASGAS

SiH4 CH4 N2 H2

bypass system N2

SYSTEM 1 VALVES

H2 Ar

He

CH4

CH4

H2 N2

SiH4

SiH4

DEPOSITION SYSTEM VALVES

1.

1.

1.1. VacuumingVacuumingVacuumingVacuuming thethethethe gasgasgasgas lineslineslineslines

1. Turn on the metering valve. Wait until pressure is 10^-3. 2. On the control panel of System-1:-

1. Turn on the system valve. Wait until pressure is 10^-3. 2. Turn on the SiH4valve. Wait until pressure is 10^-3. 3. On the control panel of Deposition System:-

1. Turn on the SiH4valve. Wait until pressure is 10^-3.

V1V1 V1 V1 V2V2

V2 V2

V3 V3V3V3

V4 V4 V4 V4

Nitrogen Tank-2

Silane Tank

To deposition system

N2 SiH4

To gas release system

SAFETY

SAFETYSAFETYSAFETY CABINETCABINETCABINETCABINET

2.2.

2.2. PurgingPurgingPurgingPurging withwithwithwith NNNN2222gasgasgasgas

1. Switch on the main switch.

2. Switch on the switch on the switch board, including the emergency button. Make sure the green light turns on.

3. Turn on the N2tank outside the cabinet (Nitrogen tank-1) 4. Turn on V1, V2 and V3.

5. Wait until pressure is 10^-3. 6. Turn off the metering valve.

7. Turn on(and off) the N2gas inside the cabinet (Nitrogen tank-2).

8. Turn on the metering valve slowly. Silane gas line is now being purged with nitrogen gas.

9. Wait until pressure is 10^-3.

10. Wait until the released N2gas is finished (indicated at the volume meter).

3.

3.

3.3. FlowingFlowingFlowingFlowing thethethethe SiHSiHSiHSiH4444gasgasgasgas intointointointo thethethethe depositiondepositiondepositiondeposition chamber.chamber.chamber.chamber.

1. Close the backing valve.

2. Turn off the metering valve.

3. Turn on the N2gas for the deposition chamber (Nitrogen tank-3) 4. Turn on the N2valve at control panel of Deposition System.

5. Turn on the lower N2valve at control panel of System-1.

6. Turn on the by-pass valve at control panel of System-1.

7. Turn off V2 and V3.

8. Turn on V4.

9. Turn on(and off) the SiH4valve until the pressure meter at the tank is ~400 Psi.

Now silane gas is in the line.

10. Turn on the metering valve until desired pressure is reached.

11. Switch on the current and voltage. DEPOSITION STARTS.

N2

Tank-3

N2

Tank-2

SiH4 N2

Tank-1 SAFETY

CABINET

B2 B2

B2B2.... PerformancePerformancePerformancePerformance chartchartchartchart forforforfor depositiondepositiondepositiondeposition chamber.chamber.chamber.chamber.

B3 B3

B3B3.... ExampleExampleExampleExample ofofofof XRDXRDXRDXRD spectrumspectrumspectrumspectrum forforforfor SiliconSiliconSiliconSilicon andandandand SiliconSiliconSiliconSilicon CarbideCarbideCarbideCarbide

S ilic o n

0 0 - 0 4 1 - 1 1 1 1 ( Q ) - S ilic o n - S i - Y : 6 2 .7 5 % - d x b y : 1 . - W L : 1 .5 4 0 6 - O p e r a tio n s : Im p o r t

F ile : 0 1 0 8 0 7 - b .r a w - T y p e : 2 T h a lo n e - S ta r t: 5 .0 0 0 ° - E n d : 7 0 .0 0 0 ° - S te p : 0 .0 5 0 ° - S te p tim e : 2 . s - T e m p .: 2 5 ° C ( R o o m ) - T im e S ta r te d : 5 s - 2 - T h e ta : 5 .0 0 0 ° - T h e ta : 5 .0 0 0 ° - C h i: 0 .0 0 ° - P h i: 0 .0 0 °

Lin (Cps)

0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 2 4

2 - T h e ta - S c a le

5 1 0 2 0 3 0 4 0 5 0 6 0 7 0

S ilic o n

0 0 -0 0 1 -0 7 9 1 (D ) - S ilic o n - S i - Y : 4 6 .9 6 % - d x b y : 1 . - W L : 1 .5 4 0 6 - C u b ic - a 5 .4 2 0 0 0 - b 5 .4 2 0 0 0 - c 5 .4 2 0 0 0 - a lp h a 9 0 .0 0 0 - b e ta 9 0 .0 0 0 - g a m m a 9 0 .0 0 0 - F a c e -c e n te re d - F d -3 m (2 2 7 ) - 8 - 1 5 9 .2 2 0 O p e ra tio n s : Im p o rt

F ile : 0 1 0 8 0 7 -b .ra w - T y p e : 2 T h a lo n e - S ta rt: 5 .0 0 0 ° - E n d : 7 0 .0 0 0 ° - S te p : 0 .0 5 0 ° - S te p tim e : 2 . s - T e m p .: 2 5 °C (R o o m ) - T im e S ta rte d : 5 s - 2 -T h e ta : 5 .0 0 0 ° - T h e ta : 5 .0 0 0 ° - C h i: 0 .0 0 ° - P h i: 0 .0 0 °

Lin (Cps)

0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 2 4

2 -T h e ta - S c a le

5 1 0 2 0 3 0 4 0 5 0 6 0 7 0

S ilic o n C a r b id e

0 0 -0 4 9 -1 4 3 1 (* ) - S ilic o n C a rb id e - S iC - Y : 4 7 .3 7 % - d x b y : 1 . - W L : 1 .5 4 0 6 - R h o m b o .H .a x e s - a 3 .0 8 1 0 0 - b 3 .0 8 1 0 0 - c 8 3 .1 0 0 0 0 - a lp h a 9 0 .0 0 0 - b e ta 9 0 .0 0 0 - g a m m a 1 2 0 .0 0 0 - P rim itiv e - R 3 m (1 6 0 ) O p e ra tio n s : Im p o rt

F ile : S e tA 3 -b .ra w - T y p e : 2 T h a lo n e - S ta rt: 5 .0 0 0 ° - E n d : 8 0 .0 0 0 ° - S te p : 0 .0 5 0 ° - S te p tim e : 2 . s - T e m p .: 2 5 ° C (R o o m ) - T im e S ta rte d : 5 s - 2 -T h e ta : 5 .0 0 0 ° - T h e ta : 2 .0 0 0 ° - C h i: 0 .0 0 ° - P h i: 0 .0 0 ° -

Lin (Cps)

0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 2 4 2 5 2 6 2 7 2 8 2 9

2 - T h e ta - S c a le

5 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0

S ilic o n C a r b id e

0 0 - 0 0 3 - 1 1 4 6 ( D ) - S ilic o n C a r b id e - S iC - Y : 8 2 .5 4 % - d x b y : 1 . - W L : 1 .5 4 0 6 - H e x a g o n a l - a 3 .0 7 6 0 0 - b 3 .0 7 6 0 0 - c 1 5 .0 7 0 0 0 - a lp h a 9 0 .0 0 0 - b e ta 9 0 .0 0 0 - g a m m a 1 2 0 .0 0 0 - P r im itiv e - P 6 3 m c ( 1 8 6 ) - O p e r a tio n s : Im p o r t

F ile : 0 1 0 8 0 7 - b .r a w - T y p e : 2 T h a lo n e - S ta r t: 5 .0 0 0 ° - E n d : 7 0 .0 0 0 ° - S te p : 0 .0 5 0 ° - S te p tim e : 2 . s - T e m p .: 2 5 ° C ( R o o m ) - T im e S ta r te d : 5 s - 2 - T h e ta : 5 .0 0 0 ° - T h e ta : 5 .0 0 0 ° - C h i: 0 .0 0 ° - P h i: 0 .0 0 °

Lin (Cps)

0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 2 4

2 - T h e ta - S c a le

5 1 0 2 0 3 0 4 0 5 0 6 0 7 0

APPENDIX APPENDIX APPENDIX APPENDIX CCCC Morphology Morphology Morphology

Morphology studiesstudiesstudiesstudies C1.C1.

C1.C1. AFMAFMAFMAFM imagesimagesimagesimages ofofofof SiCSiCSiCSiC thinthinthinthin filmsfilmsfilmsfilms preparedpreparedpreparedprepared bybybyby RF-PECVDRF-PECVDRF-PECVDRF-PECVD technique.technique.technique.technique.

R=1.5 R=2.4

R=4.0 R=9.0

R=20

C2.

C2.

C2.C2. (a)AFM(a)AFM(a)AFM(a)AFM imagesimagesimagesimages ofofofof SiCSiCSiCSiC thinthinthinthin filmsfilmsfilmsfilms preparedpreparedpreparedprepared bybybyby DC-PECVDDC-PECVDDC-PECVDDC-PECVD technique.technique.technique.technique.

R=2

R=4

R=6

R=10

R=14

C2.

C2.

C2.C2. (b)(b)(b)(b)RoughnessRoughnessRoughnessRoughness analysisanalysisanalysisanalysis ofofofof SiCSiCSiCSiC thinthinthinthin filmsfilmsfilmsfilms preparedpreparedpreparedprepared bybybyby DC-PECVDDC-PECVDDC-PECVDDC-PECVD technique.technique.technique.technique.

R=2 R=4

R=6 R=10

R=14

C3.

C3.

C3.C3. AFMAFMAFMAFM imagesimagesimagesimages ofofofof SiCSiCSiCSiC thinthinthinthin filmsfilmsfilmsfilms preparedpreparedpreparedprepared bybybyby HW-CVDHW-CVDHW-CVDHW-CVD technique.technique.technique.technique.

R=2

R=4

R=6

R=10

R=14

C4.

C4.

C4.C4.(a)AFMa)AFMa)AFMa)AFM imagesimagesimagesimages ofofofof SiCSiCSiCSiC thinthinthinthin filmsfilmsfilmsfilms preparedpreparedpreparedprepared bybybyby hybridhybridhybridhybrid HW-PECVDHW-PECVDHW-PECVDHW-PECVD techniquetechniquetechniquetechnique withwith

withwith hydrogenhydrogenhydrogenhydrogen dilution.dilution.dilution.dilution.

R=2 with hydrogen dilution.

R=14 with hydrogen dilution.

C4.

C4.

C4.C4. (b)(b)(b)(b)RoughnessRoughnessRoughnessRoughness analysisanalysisanalysisanalysis ofofofof SiCSiCSiCSiC thinthinthinthin filmsfilmsfilmsfilms preparedpreparedpreparedprepared bybybyby hybridhybridhybridhybrid HW-PECVDHW-PECVDHW-PECVDHW-PECVD technique

technique

techniquetechnique withwithwithwith hydrogenhydrogenhydrogenhydrogen dilution.dilution.dilution.dilution.

R=2 with hydrogen dilution. R=14 with hydrogen dilution.

C5.

C5.

C5.C5. AFMAFMAFMAFM imagesimagesimagesimages ofofofof SiCSiCSiCSiC thinthinthinthin filmsfilmsfilmsfilms preparedpreparedpreparedprepared bybybyby hybridhybridhybridhybrid HW-PECVDHW-PECVDHW-PECVDHW-PECVD techniquetechniquetechniquetechnique withwithwithwith hydrogen

hydrogen

hydrogenhydrogen surfacesurfacesurfacesurface treatment.treatment.treatment.treatment.

Treatment time = 3 minutes

Treatment time = 2 minutes

Treatment time = 1 minute